生命周期: | Transferred | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.38 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 5.5 A |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 135 pF |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF4N01HD | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS | |
MMDF4N01HDR2 | MOTOROLA |
获取价格 |
4A, 12V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
MMDF4N01ZR1 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
MMDF4N01ZR2 | MOTOROLA |
获取价格 |
4500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
MMDF4N02 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET | |
MMDF4P03HD | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 30 VOLTS | |
MMDF4P03HDR2 | ONSEMI |
获取价格 |
4A, 30V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8 | |
MMDF5N02Z | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS | |
MMDF5N02ZR2 | ONSEMI |
获取价格 |
5000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | |
MMDF6N02HD | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |