Datasheet > MMDFS2P102

MMDFS2P102

更新时间： 2024-09-14 22:22:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	251K
描述
P-Channel Power MOSFET with Schottky Rectifier 20 Volts

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MMDFS2P102 数据手册

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SEMICONDUCTOR TECHNICAL DATA

MOSFET and Schottky Rectifier

P–Channel Power MOSFET

with Schottky Rectifier

20 Volts

The FETKY product family incorporates low R

, true logic level MOSFETs

DS(on)

packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers

to offer high efficiency components in a space saving configuration. Independent pinouts

for TMOS and Schottky die allow the flexibility to use a single component for switching

and rectification functions in a wide variety of applications such as Buck Converter,

Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-

ment in Battery Packs, Chargers, Cell Phones and other Portable Products.

= 0.16

DS(on)

= 0.39 Volts

• HDTMOS Power MOSFET with Low V , Low I Schottky Rectifier

• Lower Component Placement and Inventory Costs along with

Board Space Savings

• Logic Level Gate Drive — Can be Driven by Logic ICs

• Mounting Information for SO–8 Package Provided

CASE 751–05, Style 18

(SO–8)

• I

Specified at Elevated Temperature

DSS

• Applications Information Provided

TOP VIEW

(1)

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 M

)

DGR

Gate–to–Source Voltage — Continuous

(3)

Drain Current

— Continuous @ T = 25°C

3.3

2.1

— Continuous @ T = 100°C

— Single Pulse (tp

10 s)

Apk

Watts

(2)

Total Power Dissipation @ T = 25°C

2.0

Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C

324

= 30 Vdc, V

= 5.0 Vdc, V = 20 Vdc, I = 9.0 Apk, L = 10 mH, R = 25

DS L G

SCHOTTKY RECTIFIER MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

Volts

RRM

(3)

Average Forward Current

Peak Repetitive Forward Current

Non–Repetitive Peak Surge Current

(Rated V ) T = 100°C

1.0

2.0

Amps

(3)

(Rated V , Square Wave, 20 kHz) T = 105°C

frm

fsm

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

DEVICE MARKING

ORDERING INFORMATION

Device

Reel Size

Tape Width

12 mm embossed tape

Quantity

2P102

MMDFS2P102R2

13″

2500 units

(1) Negative sign for P–channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.

(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

FETKY is a trademark of International Rectifier.

Motorola TMOS Product Preview Data

Motorola, Inc. 1997

12 3 4 5 6 7...12

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