生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 325 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.035 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 30 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDJ3N03BJT | MOTOROLA |
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DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES | |
MMDJ3N03BJT | ONSEMI |
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Plastic Power Transistors SO−8 for Surface Mount Applications | |
MMDJ3N03BJTR2 | ONSEMI |
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Plastic Power Transistors | |
MMDJ3P03BJT | MOTOROLA |
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DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES | |
MMDJ3P03BJTR2G | ONSEMI |
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3A, 30V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, PLASTIC, SOIC-8 | |
MMDJ-65601L-25/883:D | TEMIC |
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Standard SRAM, 1MX1, 25ns, CMOS, CDFP32, | |
MMDJ-65601L-25:D | TEMIC |
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Standard SRAM, 1MX1, 25ns, CMOS, CDFP32, | |
MMDJ-65601L-25P883 | TEMIC |
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Standard SRAM, 1MX1, 25ns, CMOS, CDFP32, | |
MMDJ-65601L-25P883:D | TEMIC |
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Standard SRAM, 1MX1, 25ns, CMOS, CDFP32, | |
MMDJ-65601L-25SHXXX | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 25ns, CMOS, CDFP32, |