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MMDJ3N03BJT PDF预览

MMDJ3N03BJT

更新时间: 2024-09-15 05:49:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
6页 193K
描述
Plastic Power Transistors SO−8 for Surface Mount Applications

MMDJ3N03BJT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:MINIATURE, PLASTIC, CASE 751-07, SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.46
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):72 MHzBase Number Matches:1

MMDJ3N03BJT 数据手册

 浏览型号MMDJ3N03BJT的Datasheet PDF文件第2页浏览型号MMDJ3N03BJT的Datasheet PDF文件第3页浏览型号MMDJ3N03BJT的Datasheet PDF文件第4页浏览型号MMDJ3N03BJT的Datasheet PDF文件第5页浏览型号MMDJ3N03BJT的Datasheet PDF文件第6页 
MMDJ3N03BJT  
Plastic Power Transistors  
SO8 for Surface Mount Applications  
Collector Emitter Sustaining Voltage — V  
CEO(sus)  
= 30 Vdc (Min) @ I = 10 mAdc  
C
http://onsemi.com  
High DC Current Gain —  
= 85 (Min) @ I = 0.8 Adc  
h
FE  
C
= 60 (Min) @ I = 3.0 Adc  
C
DUAL BIPOLAR  
POWER TRANSISTOR  
NPN SILICON  
Low Collector Emitter Saturation Voltage —  
= 0.18 Vdc (Max) @ I = 1.2 Adc  
V
CE(sat)  
C
= 0.45 Vdc (Max) @ I = 3.0 Adc  
C
30 VOLTS, 3 AMPERES  
Miniature SO8 Surface Mount Package Saves Board Space  
(SO8)  
CASE 75107  
Style 16  
1
2
3
4
8
7
6
5
Collector−1  
Collector−1  
Collector−2  
Collector−2  
Emitter−1  
Base−1  
Emitter−2  
Base−2  
Top View  
Pinout  
C
C
E
B
E
B
Schematic  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 5  
MMDJ3N03BJT/D  

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