Datasheet > MMDFS3P303

MMDFS3P303

更新时间： 2024-09-14 22:14:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	168K
描述
Power MOSFET 3 Amps, 30 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMDFS3P303 数据手册

MMDFS3P303

Power MOSFET

3 Amps, 30 Volts

P–Channel SO–8, FETKYt

The FETKY product family incorporates low R

, MOSFETs

DS(on)

http://onsemi.com

packaged with industry leading, low forward drop, low leakage

Schottky Barrier rectifiers to offer high efficiency components in a

space saving configuration. Independent pinouts for MOSFET and

Schottky die allow the flexibility to use a single component for

switching and rectification functions in a wide variety of applications

such as Buck Converter, Buck–Boost, Synchronous Rectification,

Low Voltage Motor Control, and Load Management in Battery Packs,

Chargers, Cell Phones and other Portable Products.

3 AMPERES

30 VOLTS

= 100 mW

DS(on)

V = 0.42 Volts

P–Channel

• Power MOSFET with Low V , Low I Schottky Rectifier

• Lower Component Placement and Inventory Costs along with

Board Space Savings

• R2 Suffix for Tape and Reel (2500 units/13″ reel)

• Mounting Information for SO–8 Package Provided

• I

Specified at Elevated Temperature

DSS

• Applications Information Provided

• Marking: 3P303

MARKING

DIAGRAM

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Notes 1. & 2.)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (R

Symbol

Value

Unit

Vdc

SO–8

CASE 751

STYLE 18

6N303

LYWW

DSS

= 1.0 MW)

DGR

Gate–to–Source Voltage – Continuous

"20

Drain Current

– Continuous @ T = 25°C

– Continuous @ T = 100°C

– Single Pulse (tp v 10 ms)

= Location Code

= Year

= Work Week

3.5

2.25

Adc

Apk

Total Power Dissipation @ T = 25°C

(Note 3.)

2.0

Watts

PIN ASSIGNMENT

Single Pulse Drain–to–Source Avalanche

375

Anode

Source

Cathode

Drain

Energy – STARTING T = 25°C

= 30 Vdc, V

= 10 Vdc, V

= 20 Vdc,

= 9.0 Apk, L = 10 mH, R = 25 W

Gate

Drain

1. Negative sign for P–channel device omitted for clarity.

2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.

3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

Top View

10 sec. max.

ORDERING INFORMATION

Device

MMDFS3P303R2

Package

Shipping

2500 Tape & Reel

SO–8

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev. 2

MMDFS3P303/D

12 3 4 5 6 7...12

中文翻译

下载PDF

与MMDFS3P303相关器件

型号	品牌	获取价格	描述	数据表
MMDFS3P303-D	ONSEMI	获取价格	Power MOSFET 3 Amps, 30 Volts
MMDFS3P303R2	ONSEMI	获取价格	Power MOSFET 3 Amps, 30 Volts
MMDFS6N303	MOTOROLA	获取价格	Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Meta
MMDFS6N303R2	MOTOROLA	获取价格	6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
MMDJ3N03BJT	MOTOROLA	获取价格	DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES
MMDJ3N03BJT	ONSEMI	获取价格	Plastic Power Transistors SO−8 for Surface Mount Applications
MMDJ3N03BJTR2	ONSEMI	获取价格	Plastic Power Transistors
MMDJ3P03BJT	MOTOROLA	获取价格	DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
MMDJ3P03BJTR2G	ONSEMI	获取价格	3A, 30V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, PLASTIC, SOIC-8
MMDJ-65601L-25/883:D	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, CDFP32,

与MMDFS3P303相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDFS3P303

MMDFS3P303 数据手册

与MMDFS3P303相关器件

与MMDFS3P303相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDFS3P303

MMDFS3P303 数据手册

与MMDFS3P303相关器件

与MMDFS3P303相关文章

您还可以找

您在本页遇到什么问题？