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MMDFS6N303

更新时间： 2024-11-09 19:42:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 251K
描述
Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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MMDFS6N303 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：unknown
风险等级：5.47其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：325 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDFS6N303 数据手册

 浏览型号MMDFS6N303的Datasheet PDF文件第2页浏览型号MMDFS6N303的Datasheet PDF文件第3页浏览型号MMDFS6N303的Datasheet PDF文件第4页浏览型号MMDFS6N303的Datasheet PDF文件第5页浏览型号MMDFS6N303的Datasheet PDF文件第6页浏览型号MMDFS6N303的Datasheet PDF文件第7页 
Order this document  
by MMDFS6N303/D  
SEMICONDUCTOR TECHNICAL DATA  
MOSFET and Schottky Rectifier  
N–Channel Power MOSFET  
with Schottky Rectifier  
30 Volts  
The FETKY product family incorporates low R  
, true logic level MOSFETs  
DS(on)  
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers  
to offer high efficiency components in a space saving configuration. Independent pinouts  
for TMOS and Schottky die allow the flexibility to use a single component for switching  
and rectification functions in a wide variety of applications such as Buck Converter,  
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-  
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.  
R
= 35 m  
DS(on)  
= 0.42 Volts  
V
F
• HDTMOS Power MOSFET with Low V  
F
• Lower Component Placement and Inventory Costs along with  
Board Space Savings  
CASE 751–06, Style 18  
(SO–8)  
• Logic Level Gate Drive — Can be Driven by Logic ICs  
• Mounting Information for SO–8 Package Provided  
• Applications Information Provided  
• R2 Suffix for Tape and Reel (2500 units/13″ reel)  
• Marking: 6N303  
1
2
8
7
A
A
S
G
C
C
D
D
6
3
4
5
TOP VIEW  
(1)  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 M  
)
V
DGR  
30  
Gate–to–Source Voltage — Continuous  
(2)  
V
GS  
20  
Drain Current  
— Continuous @ T = 25°C  
I
6.0  
30  
Adc  
Apk  
A
D
— Single Pulse (tp  
10 s)  
I
DM  
(2)  
Total Power Dissipation @ T = 25°C  
P
2.0  
Watts  
mJ  
A
D
Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C  
E
AS  
325  
J
V
DD  
= 30 Vdc, V  
GS  
= 5.0 Vdc, V = 20 Vdc, I = 9.0 Apk, L = 10 mH, R = 25  
DS L G  
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
30  
Volts  
Amps  
Amps  
Amps  
RRM  
R
V
(2)  
Average Forward Current  
(Rated V ) T = 104°C  
I
O
2.0  
R
A
(2)  
Peak Repetitive Forward Current  
I
frm  
(Rated V , Square Wave, 20 kHz) T = 108°C  
4.0  
30  
R
A
Non–Repetitive Peak Surge Current  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
I
fsm  
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.  
(2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
FETKY is a trademark of International Rectifier.  
Motorola, Inc. 1998  
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