5秒后页面跳转
捷配首页

Datasheet > MMDFS6N303
MMDFS6N303 PDF预览

MMDFS6N303

更新时间： 2024-09-15 19:42:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 251K
描述
Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

阅读下载

中文翻译

获取价格

MMDFS6N303 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：unknown
风险等级：5.47其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：325 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDFS6N303 数据手册

 浏览型号MMDFS6N303的Datasheet PDF文件第2页浏览型号MMDFS6N303的Datasheet PDF文件第3页浏览型号MMDFS6N303的Datasheet PDF文件第4页浏览型号MMDFS6N303的Datasheet PDF文件第5页浏览型号MMDFS6N303的Datasheet PDF文件第6页浏览型号MMDFS6N303的Datasheet PDF文件第7页 
Order this document  
by MMDFS6N303/D  
SEMICONDUCTOR TECHNICAL DATA  
MOSFET and Schottky Rectifier  
N–Channel Power MOSFET  
with Schottky Rectifier  
30 Volts  
The FETKY product family incorporates low R  
, true logic level MOSFETs  
DS(on)  
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers  
to offer high efficiency components in a space saving configuration. Independent pinouts  
for TMOS and Schottky die allow the flexibility to use a single component for switching  
and rectification functions in a wide variety of applications such as Buck Converter,  
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-  
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.  
R
= 35 m  
DS(on)  
= 0.42 Volts  
V
F
• HDTMOS Power MOSFET with Low V  
F
• Lower Component Placement and Inventory Costs along with  
Board Space Savings  
CASE 751–06, Style 18  
(SO–8)  
• Logic Level Gate Drive — Can be Driven by Logic ICs  
• Mounting Information for SO–8 Package Provided  
• Applications Information Provided  
• R2 Suffix for Tape and Reel (2500 units/13″ reel)  
• Marking: 6N303  
1
2
8
7
A
A
S
G
C
C
D
D
6
3
4
5
TOP VIEW  
(1)  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 M  
)
V
DGR  
30  
Gate–to–Source Voltage — Continuous  
(2)  
V
GS  
20  
Drain Current  
— Continuous @ T = 25°C  
I
6.0  
30  
Adc  
Apk  
A
D
— Single Pulse (tp  
10 s)  
I
DM  
(2)  
Total Power Dissipation @ T = 25°C  
P
2.0  
Watts  
mJ  
A
D
Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C  
E
AS  
325  
J
V
DD  
= 30 Vdc, V  
GS  
= 5.0 Vdc, V = 20 Vdc, I = 9.0 Apk, L = 10 mH, R = 25  
DS L G  
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
30  
Volts  
Amps  
Amps  
Amps  
RRM  
R
V
(2)  
Average Forward Current  
(Rated V ) T = 104°C  
I
O
2.0  
R
A
(2)  
Peak Repetitive Forward Current  
I
frm  
(Rated V , Square Wave, 20 kHz) T = 108°C  
4.0  
30  
R
A
Non–Repetitive Peak Surge Current  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
I
fsm  
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.  
(2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
FETKY is a trademark of International Rectifier.  
Motorola, Inc. 1998  
1234567...12

中文翻译

下载PDF

与MMDFS6N303相关器件

型号 品牌 获取价格 描述 数据表
MMDFS6N303R2 MOTOROLA

获取价格

 		6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
MMDJ3N03BJT MOTOROLA

获取价格

 		DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES
MMDJ3N03BJT ONSEMI

获取价格

 		Plastic Power Transistors SO−8 for Surface Mount Applications
MMDJ3N03BJTR2 ONSEMI

获取价格

 		Plastic Power Transistors
MMDJ3P03BJT MOTOROLA

获取价格

 		DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
MMDJ3P03BJTR2G ONSEMI

获取价格

 		3A, 30V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, PLASTIC, SOIC-8
MMDJ-65601L-25/883:D TEMIC

获取价格

 		Standard SRAM, 1MX1, 25ns, CMOS, CDFP32,
MMDJ-65601L-25:D TEMIC

获取价格

 		Standard SRAM, 1MX1, 25ns, CMOS, CDFP32,
MMDJ-65601L-25P883 TEMIC

获取价格

 		Standard SRAM, 1MX1, 25ns, CMOS, CDFP32,
MMDJ-65601L-25P883:D TEMIC

获取价格

 		Standard SRAM, 1MX1, 25ns, CMOS, CDFP32,

与MMDFS6N303相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证