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MMDF7N02ZR2 PDF预览

MMDF7N02ZR2

更新时间： 2024-09-15 12:03:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 256K
描述
Power MOSFET 7 Amps, 20 Volts N−Channel SO−8, Dual

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中文翻译

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MMDF7N02ZR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SO-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.31
其他特性：ESD PROTECTED, LOGIC LEVEL COMPATIBLE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：7 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.027 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：155 pF
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF7N02ZR2 数据手册

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MMDF7N02Z  
Power MOSFET  
7 Amps, 20 Volts  
N−Channel SO−8, Dual  
EZFETst are an advanced series of Power MOSFETs which  
contain monolithic back−to−back zener diodes. These zener diodes  
provide protection against ESD and unexpected transients. These  
http://onsemi.com  
miniature surface mount MOSFETs feature ultra low R  
and true  
DS(on)  
7 AMPERES  
20 VOLTS  
RDS(on) = 27 mΩ  
logic level performance. They are capable of withstanding high energy  
in the avalanche and commutation modes and the drain−to−source  
diode has a very low reverse recovery time. EZFET devices are  
designed for use in low voltage, high speed switching applications  
where power efficiency is important. Typical applications are dc−dc  
converters, and power management in portable and battery powered  
products such as computers, printers, cellular and cordless phones.  
They can also be used for low voltage motor controls in mass storage  
products such as disk drives and tape drives.  
N−Channel  
D
G
• Zener Protected Gates Provide Electrostatic Discharge Protection  
• Designed to Withstand 200 V Machine Model and 2000 V Human  
Body Model  
S
• Ultra Low R  
Provides Higher Efficiency and Extends Battery  
DS(on)  
MARKING  
DIAGRAM  
Life  
• Logic Level Gate Drive − Can be Driven by Logic ICs  
• Miniature SO−8 Surface Mount Package − Saves Board Space  
• Diode is Characterized for use in Bridge Circuits  
• Diode Exhibits High Speed, with Soft Recovery  
SO−8, Dual  
CASE 751  
STYLE 11  
7N02Z  
LYWW  
8
• I  
Specified at Elevated Temperature  
DSS  
1
• Mounting Information for SO−8 Package Provided  
7N02Z = Device Code  
L
= Location Code  
Y
= Year  
WW  
= Work Week  
PIN ASSIGNMENT  
Source−1  
Gate−1  
Drain−1  
Drain−1  
Drain−2  
1
2
3
4
8
7
6
5
Source−2  
Gate−2  
Drain−2  
Top View  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2500 Tape & Reel  
MMDF7N02ZR2  
SO−8  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
September, 2004 − Rev. XXX  
MMDF7N02Z/D  
1234567...12

中文翻译

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MMDF7N02ZR2 替代型号

型号 品牌 替代类型 描述 数据表
MMDF5N02ZR2 ONSEMI

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