5秒后页面跳转
捷配首页

Datasheet > MMDF5N02ZR2
MMDF5N02ZR2 PDF预览

MMDF5N02ZR2

更新时间： 2024-09-15 14:14:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
12页 109K
描述
5000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8

阅读下载

中文翻译

获取价格

MMDF5N02ZR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SO-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.38
其他特性：LOGIC LEVEL COMPATIBLE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：5 A
最大漏极电流 (ID)：5 A最大漏源导通电阻：0.04 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：225 pF
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF5N02ZR2 数据手册

 浏览型号MMDF5N02ZR2的Datasheet PDF文件第2页浏览型号MMDF5N02ZR2的Datasheet PDF文件第3页浏览型号MMDF5N02ZR2的Datasheet PDF文件第4页浏览型号MMDF5N02ZR2的Datasheet PDF文件第5页浏览型号MMDF5N02ZR2的Datasheet PDF文件第6页浏览型号MMDF5N02ZR2的Datasheet PDF文件第7页 
MMDF5N02Z  
Power MOSFET  
5 Amps, 20 Volts  
N–Channel SO–8, Dual  
EZFETst are an advanced series of Power MOSFETs which con-  
tain monolithic back–to–back zener diodes. These zener diodes pro-  
vide protection against ESD and unexpected transients. These  
http://onsemi.com  
miniature surface mount MOSFETs feature low R  
and true logic  
DS(on)  
5 AMPERES  
20 VOLTS  
level performance. They are capable of withstanding high energy in  
the avalanche and commutation modes and the drain–to–source diode  
has a very low reverse recovery time. EZFET devices are designed for  
use in low voltage, high speed switching applications where power ef-  
ficiency is important.  
R
= 40 mΩ  
DS(on)  
N–Channel  
D
• Zener Protected Gates Provide Electrostatic Discharge Protection  
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
• Logic Level Gate Drive – Can Be Driven by Logic ICs  
• Miniature SO–8 Surface Mount Package – Saves Board Space  
• Diode Exhibits High Speed, With Soft Recovery  
G
• I  
Specified at Elevated Temperature  
DSS  
• Mounting Information for SO–8 Package Provided  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
20  
20  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
V
GS  
Gate–to–Source Voltage – Continuous  
Drain Current – Continuous @ T = 25°C  
DGR  
SO–8, Dual  
CASE 751  
STYLE 11  
V
± 12  
5N02Z  
LYWW  
GS  
8
I
I
5.0  
4.5  
40  
A
A
D
D
Drain Current – Continuous @ T = 70°C  
Drain Current – Single Pulse (t ≤ 10 µs)  
1
I
Apk  
Watts  
°C  
p
DM  
Total Power Dissipation @ T = 25°C (Note 1.)  
P
D
2.0  
A
5N02Z = Device Code  
Operating and Storage Temperature Range  
T , T  
– 55  
to 150  
J
stg  
L
Y
= Location Code  
= Year  
WW  
= Work Week  
Thermal Resistance – Junction to Ambient  
Maximum Temperature for Soldering  
R
62.5  
260  
°C/W  
°C  
θJA  
T
L
1. When mounted on 1 inch square FR–4 or G–10 board  
(V = 4.5 V, @ 10 Seconds).  
PIN ASSIGNMENT  
GS  
Source–1  
Gate–1  
Drain–1  
Drain–1  
Drain–2  
1
2
3
4
8
7
6
5
Source–2  
Gate–2  
Drain–2  
Top View  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2500 Tape & Reel  
MMDF5N02ZR2  
SO–8  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
January, 2001 – Rev. 2  
MMDF5N02Z/D  
1234567...12

中文翻译

下载PDF

与MMDF5N02ZR2相关器件

型号 品牌 获取价格 描述 数据表
MMDF6N02HD MOTOROLA

获取价格

 		DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
MMDF6N02HDR2 ROCHESTER

获取价格

 		6500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-07, SOP-8
MMDF6N02HDR2 MOTOROLA

获取价格

 		6500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMDF6N03HD MOTOROLA

获取价格

 		DUAL TMOS POWER MOSFET 30 VOLTS
MMDF6N03HD ONSEMI

获取价格

 		Power MOSFET 6 Amps, 30 Volts
MMDF6N03HDR2 ONSEMI

获取价格

 		Power MOSFET 6 Amps, 30 Volts
MMDF7N02Z MOTOROLA

获取价格

 		DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02ZR2 ROCHESTER

获取价格

 		7000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
MMDF7N02ZR2 ONSEMI

获取价格

 		Power MOSFET 7 Amps, 20 Volts N−Channel SOâ
MMDFS2P102 MOTOROLA

获取价格

 		P-Channel Power MOSFET with Schottky Rectifier 20 Volts

与MMDF5N02ZR2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证