Datasheet > MMDF6N03HDR2

MMDF6N03HDR2

更新时间： 2024-09-15 12:29:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	236K
描述
Power MOSFET 6 Amps, 30 Volts

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MMDF6N03HDR2 数据手册

MMDF6N03HD

Preferred Device

Power MOSFET

6 Amps, 30 Volts

N−Channel SO−8, Dual

These miniature surface mount MOSFETs feature low R

and

DS(on)

true logic level performance. Dual MOSFET devices are designed for

use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc−dc converters, and

power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives.

http://onsemi.com

6 AMPERES

30 VOLTS

R_DS(on)= 35 mW

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

N−Channel

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Mounting Information for SO−8 Package Provided

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Rating

Symbol

Value

Unit

Vdc

Drain−to−Source Voltage

DSS

Gate−to−Source Voltage − Continuous

± 20

Drain Current − Continuous @ T = 25°C

6.0

Adc

Apk

SO−8, Dual

CASE 751

STYLE 11

Drain Current − Single Pulse (t ≤ 10 μs)

D6N03

LYWW

Source Current − Continuous @ T = 25°C

1.7

2.0

Adc

Total Power Dissipation @ T = 25°C

Watts

(Note 1.)

Operating and Storage Temperature Range

T , T

− 55 to

°C

D6N03

= Device Code

stg

150

= Location Code

= Year

= Work Week

Single Pulse Drain−to−Source Avalanche

325

Energy − Starting T = 25°C

(V = 30 Vdc, V = 5.0 Vdc,

= 20 Vdc, I = 9.0 Apk,

PIN ASSIGNMENT

L = 10 mH, R = 25 W)

Thermal Resistance − Junction−to−Ambient

62.5

260

°C/W

°C

Source−1

Gate−1

Drain−1

Drain−2

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 sec.

Source−2

1. Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

Gate−2

Drain−2

Top View

ORDERING INFORMATION

Device

MMDF6N03HDR2

Package

Shipping

2500 Tape & Reel

SO−8

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

August, 2006 − Rev. 4

MMDF6N03HD/D

12 3 4 5 6 7...10

中文翻译

下载PDF

MMDF6N03HDR2 替代型号

型号	品牌	替代类型	描述	数据表
FDS6990A	ONSEMI	功能相似	双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，7.5A，18mΩ
FDS6990AS	ONSEMI	功能相似	双 N 沟道，PowerTrench® SyncFET™，30V，7.5A，22mΩ
FDS6984AS	ONSEMI	功能相似	30V双通道笔记本电源N沟道PowerTrench® SyncFET™

与MMDF6N03HDR2相关器件

型号	品牌	获取价格	描述	数据表
MMDF7N02Z	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02ZR2	ROCHESTER	获取价格	7000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
MMDF7N02ZR2	ONSEMI	获取价格	Power MOSFET 7 Amps, 20 Volts NâChannel SOâ
MMDFS2P102	MOTOROLA	获取价格	P-Channel Power MOSFET with Schottky Rectifier 20 Volts
MMDFS3P303	ONSEMI	获取价格	Power MOSFET 3 Amps, 30 Volts
MMDFS3P303-D	ONSEMI	获取价格	Power MOSFET 3 Amps, 30 Volts
MMDFS3P303R2	ONSEMI	获取价格	Power MOSFET 3 Amps, 30 Volts
MMDFS6N303	MOTOROLA	获取价格	Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Meta
MMDFS6N303R2	MOTOROLA	获取价格	6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
MMDJ3N03BJT	MOTOROLA	获取价格	DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

与MMDF6N03HDR2相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDF6N03HDR2

MMDF6N03HDR2 数据手册

MMDF6N03HDR2 替代型号

与MMDF6N03HDR2相关器件

与MMDF6N03HDR2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDF6N03HDR2

MMDF6N03HDR2 数据手册

MMDF6N03HDR2 替代型号

与MMDF6N03HDR2相关器件

与MMDF6N03HDR2相关文章

您还可以找

您在本页遇到什么问题？