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MMDF7N02Z

更新时间： 2024-09-14 22:31:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 194K
描述
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS

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中文翻译

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MMDF7N02Z 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.37其他特性：ESD PROTECTED, LOGIC LEVEL COMPATIBLE
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.027 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：155 pF
JESD-30 代码：R-PDSO-G8元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MMDF7N02Z 数据手册

 浏览型号MMDF7N02Z的Datasheet PDF文件第2页浏览型号MMDF7N02Z的Datasheet PDF文件第3页浏览型号MMDF7N02Z的Datasheet PDF文件第4页浏览型号MMDF7N02Z的Datasheet PDF文件第5页浏览型号MMDF7N02Z的Datasheet PDF文件第6页浏览型号MMDF7N02Z的Datasheet PDF文件第7页 
Order this document  
by MMDF7N02Z/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
7.0 AMPERES  
20 VOLTS  
EZFETs are an advanced series of power MOSFETs which  
utilize Motorola’s High Cell Density TMOS process and contain  
monolithic back–to–back zener diodes. These zener diodes  
provide protection against ESD and unexpected transients. These  
R
= 27 m  
DS(on)  
miniature surface mount MOSFETs feature ultra low R  
and  
DS(on)  
true logic level performance. They are capable of withstanding high  
energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
EZFET devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in  
portable and battery powered products such as computers,  
printers, cellular and cordless phones. They can also be used for  
low voltage motor controls in mass storage products such as disk  
drives and tape drives.  
D
CASE 751–05, Style 11  
SO–8  
G
•
•
•
•
•
•
•
•
•
Zener Protected Gates Provide Electrostatic Discharge Protection  
Designed to Withstand 200 V Machine Model and 2000 V Human Body Model  
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
S
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
DS(on)  
Source–2  
Gate–2  
Top View  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Max  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
20  
Gate–to–Source Voltage — Continuous  
Drain Current — Continuous @ T = 25°C  
V
GS  
± 12  
(1)  
(1)  
I
I
7.0  
4.6  
35  
A
D
D
Drain Current — Continuous @ T = 70°C  
A
(3)  
Drain Current — Pulsed Drain Current  
I
DM  
(1)  
(1)  
Total Power Dissipation @ T = 25°C  
P
P
2.0  
16  
Watts  
mW/°C  
A
D
Linear Derating Factor @ T = 25°C  
A
(2)  
(2)  
Total Power Dissipation @ T = 25°C  
1.39  
11.11  
Watts  
mW/°C  
A
D
Linear Derating Factor @ T = 25°C  
A
Operating and Storage Temperature Range  
T , T  
J stg  
– 55 to 150  
°C  
THERMAL RESISTANCE  
Parameter  
Symbol  
Typ  
Max  
Unit  
(1)  
(2)  
Junction–to–Ambient  
Junction–to–Ambient  
R
—
—
62.5  
90  
°C/W  
JA  
(1) When mounted on 1” square FR4 or G–10 board (V  
= 10 V, @ 10 seconds).  
GS  
(2) When mounted on minimum recommended FR4 or G–10 board (V  
= 10 V, @ Steady State).  
GS  
(3) Repetitive rating; pulse width limited by maximum junction temperature.  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
MMDF7N02ZR2  
Reel Size  
Tape Width  
Quantity  
2500 units  
D7N02Z  
13″  
12 mm embossed tape  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
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MMDF7N02Z 替代型号

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