5秒后页面跳转
捷配首页

Datasheet > MMDF6N02HDR2
MMDF6N02HDR2 PDF预览

MMDF6N02HDR2

更新时间： 2024-09-15 21:13:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关光电二极管晶体管
页数 文件大小 规格书
10页 193K
描述
6500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

阅读下载

中文翻译

获取价格

MMDF6N02HDR2 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：unknown风险等级：5.37
其他特性：LOGIC LEVEL COMPATIBLE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：6.5 A
最大漏极电流 (ID)：6.5 A最大漏源导通电阻：0.035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：178 pF
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
功耗环境最大值：2 W最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MMDF6N02HDR2 数据手册

 浏览型号MMDF6N02HDR2的Datasheet PDF文件第2页浏览型号MMDF6N02HDR2的Datasheet PDF文件第3页浏览型号MMDF6N02HDR2的Datasheet PDF文件第4页浏览型号MMDF6N02HDR2的Datasheet PDF文件第5页浏览型号MMDF6N02HDR2的Datasheet PDF文件第6页浏览型号MMDF6N02HDR2的Datasheet PDF文件第7页 
Order this document  
by MMDF6N02HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
6.0 AMPERES  
20 VOLTS  
Dual HDTMOS devices are an advanced series of power  
MOSFETs which utilize Motorola’s High Cell Density TMOS  
process. These miniature surface mount MOSFETs feature low  
R
= 0.035 OHM  
DS(on)  
R
and true logic level performance. Dual HDTMOS devices  
DS(on)  
are designed for use in low voltage, high speed switching  
applications where power efficiency is important. Typical applica-  
tions are dc–dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular  
and cordless phones. They can also be used for low voltage motor  
controls in mass storage products such as disk drives and tape  
drives.  
D
CASE 751–05, Style 11  
SO–8  
•
•
•
•
•
•
•
Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
G
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
S
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
Source–2  
Gate–2  
Top View  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
20  
Gate–to–Source Voltage — Continuous  
Drain Current — Continuous @ T = 25°C  
Drain Current — Continuous @ T = 70°C  
V
GS  
± 12  
I
I
6.5  
6.0  
52  
A
A
D
D
Drain Current — Single Pulse (t ≤ 10 µs)  
I
Apk  
Watts  
°C  
p
DM  
(1)  
Total Power Dissipation @ T = 25°C  
P
D
2.0  
– 55 to 150  
62.5  
A
Operating and Storage Temperature Range  
Thermal Resistance — Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes  
DEVICE MARKING  
T , T  
J
stg  
R
°C/W  
°C  
θJA  
T
L
260  
D6N02H  
(1) Mounted on 1” square FR4 or G–10 board (V  
= 4.5 V, @ 10 seconds).  
GS  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF6N02HDR2  
13″  
12mm embossed tape  
2500  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of  
the Bergquist Company.  
REV 1  
Motorola, Inc. 1997  
1234567...10

中文翻译

下载PDF

与MMDF6N02HDR2相关器件

型号 品牌 获取价格 描述 数据表
MMDF6N03HD MOTOROLA

获取价格

 		DUAL TMOS POWER MOSFET 30 VOLTS
MMDF6N03HD ONSEMI

获取价格

 		Power MOSFET 6 Amps, 30 Volts
MMDF6N03HDR2 ONSEMI

获取价格

 		Power MOSFET 6 Amps, 30 Volts
MMDF7N02Z MOTOROLA

获取价格

 		DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02ZR2 ROCHESTER

获取价格

 		7000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
MMDF7N02ZR2 ONSEMI

获取价格

 		Power MOSFET 7 Amps, 20 Volts N−Channel SOâ
MMDFS2P102 MOTOROLA

获取价格

 		P-Channel Power MOSFET with Schottky Rectifier 20 Volts
MMDFS3P303 ONSEMI

获取价格

 		Power MOSFET 3 Amps, 30 Volts
MMDFS3P303-D ONSEMI

获取价格

 		Power MOSFET 3 Amps, 30 Volts
MMDFS3P303R2 ONSEMI

获取价格

 		Power MOSFET 3 Amps, 30 Volts

与MMDF6N02HDR2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证