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MMDF4P03HDR2 PDF预览

MMDF4P03HDR2

更新时间： 2024-09-15 19:51:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 132K
描述
4A, 30V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8

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MMDF4P03HDR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.44
其他特性：LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：450 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：4 A最大漏极电流 (ID)：4 A
最大漏源导通电阻：0.085 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF4P03HDR2 数据手册

 浏览型号MMDF4P03HDR2的Datasheet PDF文件第2页浏览型号MMDF4P03HDR2的Datasheet PDF文件第3页浏览型号MMDF4P03HDR2的Datasheet PDF文件第4页浏览型号MMDF4P03HDR2的Datasheet PDF文件第5页浏览型号MMDF4P03HDR2的Datasheet PDF文件第6页浏览型号MMDF4P03HDR2的Datasheet PDF文件第7页 
MMDF4P03HD  
Preferred Device  
Advance Information  
Power MOSFET  
4 Amps, 30 Volts  
P–Channel SO–8, Dual  
Dual MOSFET devices are designed for use in low voltage, high  
speed switching applications where power efficiency is important.  
Typical applications are dc–dc converters, and power management in  
portable and battery powered products such as computers, printers,  
cellular and cordless phones. They can also be used for low voltage  
motor controls in mass storage products such as disk drives and tape  
drives.  
http://onsemi.com  
4 AMPERES  
30 VOLTS  
R
DS(on) = 85 mW  
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
P–Channel  
D
D
• Logic Level Gate Drive – Can Be Driven by Logic ICs  
• Miniature SO–8 Surface Mount Package – Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
• Diode Exhibits High Speed, With Soft Recovery  
G
G
• I  
Specified at Elevated Temperature  
DSS  
• Mounting Information for SO–8 Package Provided  
S
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Drain–to–Source Voltage  
V
DSS  
Gate–to–Source Voltage – Continuous  
V
GS  
± 20  
SO–8, Dual  
CASE 751  
STYLE 11  
Drain Current – Continuous @ T = 25°C  
I
4.0  
20  
Adc  
Apk  
A
D
DP0303  
LYWW  
Drain Current – Single Pulse (t ≤ 10 µs)  
I
8
p
DM  
Source Current – Continuous @ T = 25°C  
I
1.7  
2.0  
Adc  
A
S
1
Total Power Dissipation @ T = 25°C  
P
Watts  
A
D
(Note 1.)  
L
Y
WW  
= Location Code  
= Year  
= Work Week  
Operating and Storage Temperature Range  
T , T  
– 55 to  
150  
°C  
J
stg  
Single Pulse Drain–to–Source Avalanche  
E
AS  
450  
mJ  
Energy – Starting T = 25°C  
J
(V = 30 Vdc, V = 5.0 Vdc,  
PIN ASSIGNMENT  
DD  
GS  
V
DS  
= 20 Vdc, I = 9.0 Apk,  
L
L = 10 mH, R = 25 W)  
G
Source–1  
Gate–1  
Drain–1  
Drain–1  
Drain–2  
1
2
3
4
8
7
6
5
Thermal Resistance – Junction–to–Ambient  
R
62.5  
260  
°C/W  
°C  
θ
JA  
L
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 sec.  
T
Source–2  
Gate–2  
Drain–2  
1. Mounted on G10/FR4 glass epoxy board using minimum recommended  
footprint.  
Top View  
ORDERING INFORMATION  
Device  
MMDF4P03HDR2  
Package  
Shipping  
2500 Tape & Reel  
SO–8  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 1  
MMDF4P03HD/D  
1234567...12

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