Datasheet > MMDF5N02Z

MMDF5N02Z

更新时间： 2024-09-14 22:30:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
10页	190K
描述
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS

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SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

DUAL TMOS

POWER MOSFET

5.0 AMPERES

20 VOLTS

EZFETs

are an advanced series of power MOSFETs which

utilize Motorola’s High Cell Density HDTMOS process and contain

monolithic back–to–back zener diodes. These zener diodes

provide protection against ESD and unexpected transients. These

= 0.040 OHM

DS(on)

miniature surface mount MOSFETs feature low R

and true

DS(on)

logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

EZFET devices are designed for use in low voltage, high speed

switching applications where power efficiency is important.

•

Zener Protected Gates Provide Electrostatic Discharge Protection

Low R Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Exhibits High Speed, With Soft Recovery

CASE 751–05, Style 11

SO–8

DS(on)

Specified at Elevated Temperature

Source1

Gate1

Drain1

Drain2

DSS

Mounting Information for SO–8 Package Provided

Source2

Gate2

Top View

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T = 25°C

± 12

5.0

4.5

Drain Current — Continuous @ T = 70°C

Drain Current — Single Pulse (t ≤ 10 µs)

Apk

Watts

°C

Total Power Dissipation @ T = 25°C (1)

2.0

– 55 to 150

62.5

Operating and Storage Temperature Range

Thermal Resistance — Junction to Ambient

Maximum Temperature for Soldering

T , T

stg

°C/W

°C

θJA

260

(1) When mounted on 1 inch square FR–4 or G–10 board (V

= 4.5 V, @ 10 Seconds)

DEVICE MARKING

ORDERING INFORMATION

Device

D5N02Z

Reel Size

Tape Width

12 mm embossed tape

Quantity

2500 units

MMDF5N02ZR2

13″

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-

mark of the Bergquist Company.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7...10

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与MMDF5N02Z相关器件

型号	品牌	获取价格	描述	数据表
MMDF5N02ZR2	ONSEMI	获取价格	5000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
MMDF6N02HD	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
MMDF6N02HDR2	ROCHESTER	获取价格	6500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-07, SOP-8
MMDF6N02HDR2	MOTOROLA	获取价格	6500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMDF6N03HD	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 30 VOLTS
MMDF6N03HD	ONSEMI	获取价格	Power MOSFET 6 Amps, 30 Volts
MMDF6N03HDR2	ONSEMI	获取价格	Power MOSFET 6 Amps, 30 Volts
MMDF7N02Z	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02ZR2	ROCHESTER	获取价格	7000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
MMDF7N02ZR2	ONSEMI	获取价格	Power MOSFET 7 Amps, 20 Volts NâChannel SOâ

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