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MMDF4P03HD PDF预览

MMDF4P03HD

更新时间： 2024-09-14 22:16:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 209K
描述
DUAL TMOS POWER MOSFET 30 VOLTS

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中文翻译

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MMDF4P03HD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.92
最大漏极电流 (Abs) (ID)：4 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e0工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

MMDF4P03HD 数据手册

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Order this document  
by MMDF4P03HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
30 VOLTS  
Dual HDTMOS devices are an advanced series of power  
MOSFETs which utilize Motorola’s High Cell Density TMOS  
process. Dual HDTMOS devices are designed for use in low  
voltage, high speed switching applications where power efficiency  
is important. Typical applications are dc–dc converters, and power  
management in portable and battery powered products such as  
computers, printers, cellular and cordless phones. They can also  
be used for low voltage motor controls in mass storage products  
such as disk drives and tape drives.  
R
= 85 m  
DS(on)  
D
•
•
•
•
•
•
•
Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
CASE 751–05, Style 11  
SO–8  
G
S
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
D
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
Source–2  
Gate–2  
G
Top View  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
V
DSS  
Gate–to–Source Voltage — Continuous  
V
GS  
± 20  
Drain Current — Continuous @ T = 25°C  
I
4.0  
20  
Adc  
Apk  
A
D
Drain Current — Single Pulse (t ≤ 10 µs)  
I
p
DM  
Source Current — Continuous @ T = 25°C  
I
1.7  
2.0  
Adc  
Watts  
°C  
A
S
(1)  
Total Power Dissipation @ T = 25°C  
P
D
A
Operating and Storage Temperature Range  
T , T  
stg  
– 55 to 150  
450  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 30 Vdc, V  
= 5.0 Vdc, V  
DS  
= 20 Vdc, I = 9.0 Apk, L = 10 mH, R = 25  
)
GS  
Thermal Resistance — Junction–to–Ambient  
L
G
R
62.5  
260  
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec.  
T
L
DEVICE MARKING  
D4P03  
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF4P03HDR2  
13″  
12 mm embossed tape  
2500  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
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MMDF6N02HDR2 MOTOROLA

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MMDF6N03HD MOTOROLA

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