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MJD2955 PDF预览

MJD2955

更新时间: 2024-11-17 22:33:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 94K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJD2955 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz

MJD2955 数据手册

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MJD2955  
MJD3055  
COMPLEMENTARY SILICON POWER TRANSISTORS  
STM PREFERRED SALESTYPES  
SURFACE-MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
ELECTRICAL SIMILAR TO MJE2955 AND  
MJE3055  
3
APPLICATIONS  
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER TRANSISTORS  
1
DESCRIPTION  
The MJD2955  
complementary PNP-NPN pairs. They are  
manufactured using Epitaxial Base technology for  
cost-effectiveperformance.  
DPAK  
TO-252  
(Suffix ”T4”)  
and  
MJD3055  
form  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
MJD3055  
MJD2955  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
70  
5
V
V
V
10  
6
A
IB  
Base Current  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
20  
W
1/6  
June 1998  

MJD2955 替代型号

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