生命周期: | Obsolete | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD2955T4G | ONSEMI |
功能相似 |
Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955G | ONSEMI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD2955(TO-251) | BL Galaxy Electrical |
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60V,10A,Medium Power PNP Bipolar Transistor | |
MJD2955(TO-252) | BL Galaxy Electrical |
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60V,10A,Medium Power PNP Bipolar Transistor | |
MJD2955_02 | STMICROELECTRONICS |
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MJD2955-001 | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955-1 | MOTOROLA |
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SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD2955-1G | ONSEMI |
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Complementary Power Transistors | |
MJD2955G | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications |