是否无铅: | 含铅 | 生命周期: | Obsolete |
包装说明: | PLASTIC, CASE 369D-01, DPAK-3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 7.19 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD2955-001G | ONSEMI |
获取价格 |
Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955-1 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD2955-1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD2955G | ONSEMI |
获取价格 |
Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955RLG | ONSEMI |
获取价格 |
10 A, 60 V PNP Bipolar Power Transistor | |
MJD2955T4 | ONSEMI |
获取价格 |
Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955T4 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD2955T4G | ONSEMI |
获取价格 |
Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955TF | ONSEMI |
获取价格 |
10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL | |
MJD29C | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications |