MJD29CI

更新时间： 2024-11-18 13:11:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
4页	47K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD29CI 数据手册

MJD29/29C

General Purpose Amplifier

Low Speed Switching Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP29 and TIP29C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

: MJD29

: MJD29C

100

Collector-Emitter Voltage

CEO

: MJD29

: MJD29C

100

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

EBO

0.4

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

*Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: MJD29

: MJD29C

= 30mA, I = 0

100

Collector Cut-off Current

: MJD29

= 40V, I = 0

= 60V, I = 0

µA

: MJD29C

Collector Cut-off Current

: MJD29

= 40V, V = 0

= 100V, V = 0

µA

: MJD29C

Emitter Cut-off Current

*DC Current Gain

= 5V, I = 0

= 4V, I = 0.2A

= 4V, I = 1A

0.7

1.3

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter ON Voltage

= 1A, I = 125mA

(on)

= 4A, I = 1A

Current Gain Bandwidth Product

= 10V, I = 200mA

MHz

* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%

Rev. A2, June 2001

12 3 4

中文翻译

下载PDF

与MJD29CI相关器件

型号	品牌	获取价格	描述	数据表
MJD29CITU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
MJD29C-T1	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD29CTF	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
MJD29I	FAIRCHILD	获取价格	1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3
MJD29-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
MJD29-T1	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2
MJD29TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
MJD-2V16W1P3	SEOUL	获取价格	120V 17W Downlight
MJD30	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
MJD30-1	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3