MJD29CI

更新时间： 2024-01-29 22:55:10

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
4页	47K
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数据手册

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MJD29CI 数据手册

MJD29/29C

General Purpose Amplifier

Low Speed Switching Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP29 and TIP29C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

: MJD29

: MJD29C

100

Collector-Emitter Voltage

CEO

: MJD29

: MJD29C

100

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

EBO

0.4

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

*Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: MJD29

: MJD29C

= 30mA, I = 0

100

Collector Cut-off Current

: MJD29

= 40V, I = 0

= 60V, I = 0

µA

: MJD29C

Collector Cut-off Current

: MJD29

= 40V, V = 0

= 100V, V = 0

µA

: MJD29C

Emitter Cut-off Current

*DC Current Gain

= 5V, I = 0

= 4V, I = 0.2A

= 4V, I = 1A

0.7

1.3

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter ON Voltage

= 1A, I = 125mA

(on)

= 4A, I = 1A

Current Gain Bandwidth Product

= 10V, I = 200mA

MHz

* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%

Rev. A2, June 2001

12 3 4

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