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MJD30C PDF预览

MJD30C

更新时间: 2024-02-23 05:42:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 43K
描述
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

MJD30C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.87
最大集电极电流 (IC):1 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

MJD30C 数据手册

 浏览型号MJD30C的Datasheet PDF文件第2页浏览型号MJD30C的Datasheet PDF文件第3页浏览型号MJD30C的Datasheet PDF文件第4页 
MJD30/30C  
General Purpose Amplifier  
Low Speed Switching Applications  
Load Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP30 and TIP30C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
CBO  
: MJD30  
: MJD30C  
- 40  
- 100  
V
V
Collector-Emitter Voltage  
CEO  
: MJD30  
: MJD30C  
- 40  
- 100  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 1  
V
A
EBO  
I
I
I
C
- 3  
A
CP  
B
- 4  
A
P
Collector Dissipation (T =25°C)  
15  
W
W
°C  
°C  
C
C
Collector Dissipation (Ta=25°C)  
Junction Temperature  
1.56  
150  
T
T
J
Storage Temperature  
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
*Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: MJD30  
: MJD30C  
I
= - 30mA, I = 0  
- 40  
- 100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: MJD30  
V
V
= - 40V, I = 0  
= - 60V, I = 0  
B
- 50  
- 50  
µA  
µA  
CE  
CE  
B
: MJD30C  
Collector Cut-off Current  
: MJD30  
V
V
= - 40V, V = 0  
= 100V, V = 0  
BE  
- 20  
- 20  
µA  
µA  
CE  
CE  
BE  
: MJD30C  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
BE  
C
h
V
V
= - 4V, I = - 0.2A  
40  
15  
FE  
CE  
CE  
C
= - 4V, I = - 1A  
75  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 1A, I = - 125mA  
- 0.7  
- 1.3  
V
V
CE  
BE  
C
B
(on)  
V
V
= - 4A, I = - 1A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= - 10V, I = - 200mA  
3
MHz  
T
C
* Pulse Test: PW300ms, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

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