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MJD29-I PDF预览

MJD29-I

更新时间: 2024-11-18 19:43:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 75K
描述
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

MJD29-I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.91
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

MJD29-I 数据手册

 浏览型号MJD29-I的Datasheet PDF文件第2页浏览型号MJD29-I的Datasheet PDF文件第3页浏览型号MJD29-I的Datasheet PDF文件第4页浏览型号MJD29-I的Datasheet PDF文件第5页 
MJD29/29C  
General Purpose Amplifier  
Low Speed Switching Applications  
Load Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP29 and TIP29C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
CBO  
: MJD29  
: MJD29C  
40  
100  
V
V
Collector-Emitter Voltage  
CEO  
: MJD29  
: MJD29C  
40  
100  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
5
V
A
EBO  
I
I
I
1
3
C
A
CP  
B
0.4  
A
P
Collector Dissipation (T =25°C)  
15  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.56  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
*Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: MJD29  
: MJD29C  
I
= 30mA, I = 0  
40  
100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: MJD29  
V
V
= 40V, I = 0  
= 60V, I = 0  
B
50  
50  
µA  
µA  
CE  
CE  
B
: MJD29C  
Collector Cut-off Current  
: MJD29  
V
V
= 40V, V = 0  
= 100V, V = 0  
BE  
20  
20  
µA  
µA  
CE  
CE  
BE  
: MJD29C  
Emitter Cut-off Current  
*DC Current Gain  
V
= 5V, I = 0  
1
mA  
BE  
C
h
V
V
= 4V, I = 0.2A  
40  
15  
FE  
CE  
CE  
C
= 4V, I = 1A  
75  
0.7  
1.3  
C
V
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter ON Voltage  
I
= 1A, I = 125mA  
V
V
CE  
BE  
C
B
(on)  
V
V
= 4A, I = 1A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= 10V, I = 200mA  
3
MHz  
T
C
* Pulse Test: PW 300µs, Duty Cycle 2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

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