Datasheet > MJD30

MJD30

更新时间： 2024-11-19 08:49:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	44K
描述
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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MJD30 数据手册

MJD30/30C

General Purpose Amplifier

Low Speed Switching Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP30 and TIP30C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

: MJD30

: MJD30C

- 40

- 100

Collector-Emitter Voltage

CEO

: MJD30

: MJD30C

- 40

- 100

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

- 5

- 1

EBO

- 3

- 4

Collector Dissipation (T =25°C)

°C

Collector Dissipation (Ta=25°C)

Junction Temperature

1.56

150

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

*Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: MJD30

: MJD30C

= - 30mA, I = 0

- 40

- 100

Collector Cut-off Current

: MJD30

= - 40V, I = 0

= - 60V, I = 0

- 50

µA

: MJD30C

Collector Cut-off Current

: MJD30

= - 40V, V = 0

= 100V, V = 0

- 20

µA

: MJD30C

Emitter Cut-off Current

* DC Current Gain

= - 5V, I = 0

- 1

= - 4V, I = - 0.2A

= - 4V, I = - 1A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

= - 1A, I = - 125mA

- 0.7

- 1.3

(on)

= - 4A, I = - 1A

Current Gain Bandwidth Product

= - 10V, I = - 200mA

MHz

* Pulse Test: PW≤300ms, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4

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