Datasheet > MJD3055

MJD3055

更新时间： 2024-11-19 14:54:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	560K
描述
TO-251

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中文翻译

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数据手册

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MJD3055 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

MJD3055 TRANSISTOR (NPN)

TO-251-3L

FEATURES

Designed for General Purpose Amplifier an d Low Speed

1.BASE

Switching Applications

2.COLLECTOR

3.EMITTER

Electrically Simiar to MJE3055

DC Current Gain Specified to10A

Equivalent Circuit

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XXXX=Code

MJD3055

XXXX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

1.25

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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