生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.17 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JESD-30 代码: | R-PDSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 20 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
最大关闭时间(toff): | 3000 ns | VCEsat-Max: | 8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD3055T4 | STMICROELECTRONICS |
功能相似 |
Low voltage NPN power transistor | |
MJD3055T4G | ONSEMI |
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MJD3055G | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD3055T4G | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD3055TF | ONSEMI |
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暂无描述 | |
MJD30C | FAIRCHILD |
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Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD30C | MOTOROLA |
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Transistor | |
MJD30C-I | FAIRCHILD |
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Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD31 | KEXIN |
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MJD31 | TYSEMI |
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Lead Formed for Surface Mount Applications in Plastic Sleeves | |
MJD31 | FAIRCHILD |
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General Purpose Amplifier Low Speed Switching Applications | |
MJD31 | MOTOROLA |
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SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS | |
MJD31 | ONSEMI |
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Complementary Power Transistors |