5秒后页面跳转
MJD3055T4 PDF预览

MJD3055T4

更新时间: 2024-11-20 22:17:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 205K
描述
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

MJD3055T4 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:20 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
最大关闭时间(toff):3000 nsVCEsat-Max:8 V
Base Number Matches:1

MJD3055T4 数据手册

 浏览型号MJD3055T4的Datasheet PDF文件第2页浏览型号MJD3055T4的Datasheet PDF文件第3页浏览型号MJD3055T4的Datasheet PDF文件第4页浏览型号MJD3055T4的Datasheet PDF文件第5页浏览型号MJD3055T4的Datasheet PDF文件第6页 
Order this document  
by MJD2955/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching applications.  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
60 VOLTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to MJE2955 and MJE3055  
20 WATTS  
DC Current Gain Specified to 10 Amperes  
High Current Gain–Bandwidth Product — f = 2.0 MHz (Min) @ I = 500 mAdc  
T
C
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
70  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
CASE 369A–13  
V
CB  
V
EB  
I
C
10  
6
Base Current  
I
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
20  
0.16  
Watts  
W/ C  
CASE 369–07  
Total Power Dissipation (1) @ T = 25 C  
A
Derate above 25 C  
P
D
1.75  
0.014  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient (1)  
R
R
θJC  
θJA  
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
inches  
mm  
REV 1  
Motorola, Inc. 1995

MJD3055T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD3055T4 STMICROELECTRONICS

功能相似

Low voltage NPN power transistor
MJD3055T4G ONSEMI

功能相似

Complementary Power Transistors DPAK For Surface Mount Applications
MJD3055G ONSEMI

功能相似

Complementary Power Transistors DPAK For Surface Mount Applications

与MJD3055T4相关器件

型号 品牌 获取价格 描述 数据表
MJD3055T4G ONSEMI

获取价格

Complementary Power Transistors DPAK For Surface Mount Applications
MJD3055TF ONSEMI

获取价格

暂无描述
MJD30C FAIRCHILD

获取价格

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJD30C MOTOROLA

获取价格

Transistor
MJD30C-I FAIRCHILD

获取价格

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJD31 KEXIN

获取价格

Complementary Power Transistors
MJD31 TYSEMI

获取价格

Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD31 FAIRCHILD

获取价格

General Purpose Amplifier Low Speed Switching Applications
MJD31 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD31 ONSEMI

获取价格

Complementary Power Transistors