Datasheet > MJD31C

MJD31C

更新时间： 2024-01-01 15:43:44

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	48K
描述
Complementary Power Transistors

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数据手册

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MJD31C 数据手册

SMD Type

Transistors

Complementary Power Transistors

MJD31,MJD31C(NPN)

MJD32,MJD32C(PNP)

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Lead Formed for Surface Mount Applications in Plastic Sleeves

Pb-Free Packages are Available

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Symbol

Rating

100

Unit

MJD31,MJD32

VCEO

MJD31C,MJD32C

MJD31,MJD32

Collector-base voltage

VCB

MJD31C,MJD32C

Emitter-base voltage

Collector current

V^EB

I^C

I^CP

I^B

Collector current (pulse)

Base current

Total Device Dissipation FR-5 Board

@T^A= 25

Derate above 25

0.12

Total Device Dissipation Alumina Substrate

@T^A= 25

1.56

Derate above 25

0.012

Junction temperature

150

-65 to +150

8.3

Storage temperature

Tstg

RèJC

R^èJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Lead Temperature for Soldering Purposes

260

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