Datasheet > MJD31C

MJD31C

更新时间： 2024-01-11 04:05:42

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
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6页	154K
描述
SILICON POWER TRANSISTORS

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MJD31C 数据手册

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SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

Motorola Preferred Devices

Designed for general purpose amplifier and low speed switching applications.

SILICON

POWER TRANSISTORS

3 AMPERES

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP31 and TIP32 Series

100 VOLTS

15 WATTS

CASE 369A–13

MAXIMUM RATINGS

Rating

Symbol

Max

100

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 369–07

Collector Current — Continuous

Peak

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

Base Current

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.12

Total Power Dissipation* @ T = 25 C

Derate above 25 C

1.56

Watts

W/ C

0.012

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

8.3

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

Lead Temperature for Soldering Purposes

θJC

θJA

260

* These ratings are applicable when surface mounted on the minimum pad size recommended.

inches

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁸r Power Transistor Device Data

12 3 4 5 6

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MJD31C 替代型号

型号	品牌	替代类型	描述	数据表
NJVMJD31CT4G	ONSEMI	功能相似	Complementary Power Transistors
MJD31CT4G	ONSEMI	功能相似	Complementary Power Transistors
MJD31CG	ONSEMI	功能相似	Complementary Power Transistors

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MJD31C(TO-251)	BL Galaxy Electrical	获取价格	100V,3A,Medium Power NPN Bipolar Transistor
MJD31C(TO-252)	BL Galaxy Electrical	获取价格	100V,3A,Medium Power NPN Bipolar Transistor
MJD31C1	ONSEMI	获取价格	Complementary Power Transistors
MJD31C1	MOTOROLA	获取价格	Transistor
MJD31C-1	MOTOROLA	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD31C-1	ONSEMI	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3
MJD31C1G	ONSEMI	获取价格	Complementary Power Transistors
MJD31CA	NEXPERIA	获取价格	100 V, 3 A NPN high power bipolar transistorProduction
MJD31CEITU	ONSEMI	获取价格	3.0 A, 100 V NPN Bipolar Power Transistor
MJD31CG	ONSEMI	获取价格	Complementary Power Transistors