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MJD31CT4 PDF预览

MJD31CT4

更新时间： 2024-11-01 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 82K
描述
Complementary Power Transistors

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中文翻译

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MJD31CT4 数据手册

 浏览型号MJD31CT4的Datasheet PDF文件第2页浏览型号MJD31CT4的Datasheet PDF文件第3页浏览型号MJD31CT4的Datasheet PDF文件第4页浏览型号MJD31CT4的Datasheet PDF文件第5页浏览型号MJD31CT4的Datasheet PDF文件第6页浏览型号MJD31CT4的Datasheet PDF文件第7页 
MJD31, MJD31C (NPN),  
MJD32, MJD32C (PNP)  
MJD31C and MJD32C are Preferred Devices  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
3 AMPERES  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
• Electrically Similar to Popular TIP31 and TIP32 Series  
40 AND 100 VOLTS  
15 WATTS  
• Epoxy Meets UL 94, V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAMS  
• Pb−Free Packages are Available  
4
DPAK  
YWW  
CASE 369C  
STYLE 1  
J3xxG  
2
1
MAXIMUM RATINGS  
3
Rating  
Symbol  
Max  
Unit  
Collector−Emitter Voltage  
V
Vdc  
CEO  
4
40  
100  
MJD31, MJD32  
MJD31C, MJD32C  
DPAK−3  
CASE 369D  
STYLE 1  
YWW  
J3xxG  
Collector−Base Voltage  
Emitter−Base Voltage  
V
Vdc  
CB  
EB  
40  
100  
MJD31, MJD32  
MJD31C, MJD32C  
1
2
3
V
5
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
3
5
C
Y
WW  
xx  
= Year  
= Work Week  
= 1, 1C, 2, or 2C  
Base Current  
I
1
Adc  
B
G
= Pb−Free Package  
P
P
15  
0.12  
W
W/°C  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
D
D
C
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1.56  
0.012  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
W
W/°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.3  
80  
Unit  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
Lead Temperature for Soldering Purposes  
R
q
JC  
R
q
JA  
T
260  
L
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 6  
MJD31/D  
12345678

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MJD31CT4 替代型号

型号 品牌 替代类型 描述 数据表
MJD31CTF ONSEMI

完全替代

 3.0 A, 100 V NPN Bipolar Power Transistor
MJD31CT4G ONSEMI

完全替代

 Complementary Power Transistors
MJD31CRLG ONSEMI

完全替代

 Complementary Power Transistors

与MJD31CT4相关器件

型号 品牌 获取价格 描述 数据表
MJD31CT4-A STMICROELECTRONICS

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 		Low voltage NPN power transistor
MJD31CT4G ONSEMI

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 		Complementary Power Transistors
MJD31CTF FAIRCHILD

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 		NPN Epitaxial Silicon Transistor
MJD31CTF ONSEMI

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 		3.0 A, 100 V NPN Bipolar Power Transistor
MJD31CTF_SBDD001A FAIRCHILD

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
MJD31C-TP MCC

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 		Silicon NPN epitaxial planer Transistors
MJD31C-TP-HF MCC

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD31CUQ DIODES

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 		NPN, 100V, 3A, TO252
MJD31T4 MOTOROLA

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 		SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD31T4 ONSEMI

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 		Complementary Power Transistors

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