Datasheet > MJD31C(TO-251)

MJD31C(TO-251)

更新时间： 2024-04-09 18:58:45

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	420K
描述
100V,3A,Medium Power NPN Bipolar Transistor

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MJD31C(TO-251) 数据手册

NPN Silicon Epitaxial Planar Transistor

MJD31C

Features



Lead formed for surface mount application

Straight lead

Mechanic al Data



Case: TO-251, TO-252

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

TO-252

Ordering Information

Part Number

MJD31C

Package

Shipping Quantity

Marking Code

MJD31C

TO-251

TO-252

80 pcs / Tube

MJD31C

80 pcs / Tube or 2500 pcs / Tape & Reel

MJD31C

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

I_CM

Base Current (continuous)

I_B

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

1.25

Unit

Junction Temperature Range

Storage Temperature Range

T_J

-65 ~ +150

°C

T_STG

°C

STM0157A: May 2022

www.gmesemi.com

12 3 4 5

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