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MJD31CTF_SBDD001A PDF预览

MJD31CTF_SBDD001A

更新时间: 2024-09-13 19:10:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
7页 172K
描述
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3

MJD31CTF_SBDD001A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.06
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

MJD31CTF_SBDD001A 数据手册

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November 2013  
MJD31C  
NPN Epitaxial Silicon Transistor  
Description  
Features  
Designed for general-purpose power and switching, such  
as output or driver stages in applications.  
• General-Purpose Amplifier  
• Low-Speed Switching Applications  
• Lead Formed for Surface Mount Application (No Suffix)  
• Straight Lead (I-PAK, “- I” Suffix)  
• Electrically Similar to Popular TIP31 and TIP31C  
Applications  
• Switching Regulators  
• Converters  
• Power Amplifiers  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
Ordering Information  
Part Number  
MJD31CTF  
Top Mark  
MJD31C  
Package  
Packing Method  
Tape and Reel  
Rail  
TO-252 3L (DPAK)  
TO-251 3L (IPAK)  
MJD31CITU  
MJD31C-I  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
100  
100  
V
5
V
3
5
A
ICP  
A
IB  
1
A
Collector Dissipation (TC = 25°C)  
Collector Dissipation (TA = 25°C)  
Junction Temperature  
15.00  
1.56  
150  
PC  
W
TJ  
°C  
°C  
TSTG  
Storage Temperature  
- 65 to 150  
© 2001 Fairchild Semiconductor Corporation  
MJD31C Rev. 1.1.0  
www.fairchildsemi.com  
1

MJD31CTF_SBDD001A 替代型号

型号 品牌 替代类型 描述 数据表
KSH31CTF FAIRCHILD

类似代替

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
MJD31CTF FAIRCHILD

类似代替

NPN Epitaxial Silicon Transistor

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