MJD31CTF

更新时间： 2024-11-01 12:46:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	227K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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数据手册
替代型号

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MJD31CTF 数据手册

February 2012

MJD31/31C

NPN Epitaxial Silicon Transistor

Features

• General Purpose Amplifier

• Low Speed Switching Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP31 and TIP31C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Collector-Base Voltage

Value

Units

V_CBO

: MJD31

: MJD31C

100

V_CEO

Collector-Emitter Voltage

: MJD31

: MJD31C

100

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

P_C

Collector Dissipation (T_C= 25°C)

Collector Dissipation (T_a= 25°C)

Junction Temperature

°C

1.56

T_J

150

T_STG

Storage Temperature

- 65 to 150

Ordering Information

Part Number

MJD31CTF

Marking

Package

D-PAK

Packing Method

Tape & Reel

Tube

Remarks

MJD31C

MJD31CITU

MJD31C-I

I-PAK

MJD31/31C Rev. A4

www.fairchildsemi.com

12 3 4 5 6

中文翻译

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MJD31CTF 替代型号

型号	品牌	替代类型	描述	数据表
KSH31CTM	FAIRCHILD	类似代替	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSH31CTF	FAIRCHILD	类似代替	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic

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