Datasheet > MJD32C TO-251

MJD32C TO-251

更新时间： 2024-10-02 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	192K
描述
100V,3A,General Purpose PNP Bipolar Transistor

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MJD32C TO-251 数据手册

Product Specification

Epitaxial Planar PNP Transistor

MJD32C

FEATURES



Low formed for surface mount application

Electrically similar to popular and TIP32C

Straight Lead

APPLICATIONS



General purpose amplifier



Low speed switching applications

TO-251

TO-252

Ordering Information

Part Number

Package

TO-251

TO-252

Shipping

Marking Code

80pcs / Tube

MJD32C

80pcs / Tube or 2500pcs / Tape & Reel

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-100

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-100

V_EBO

I_C

-5

Collector Current -Continuous

Collector Current -Peak

Base Current

-3

I_CP

-5

-1

I_B

Collector Power Dissipation

Junction and Storage temperature range

P_C

1.5

℃

T_J,T_STG

-65 to +150

STM0302A

www.gmesemi.com

12 3 4 5

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