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MJD32CTM PDF预览

MJD32CTM

更新时间: 2024-11-19 11:11:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 168K
描述
3.0 A, 100 V PNP Bipolar Power Transistor

MJD32CTM 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:,Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.09
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):10JESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):15 W子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIED标称过渡频率 (fT):3 MHz
Base Number Matches:1

MJD32CTM 数据手册

 浏览型号MJD32CTM的Datasheet PDF文件第2页浏览型号MJD32CTM的Datasheet PDF文件第3页浏览型号MJD32CTM的Datasheet PDF文件第4页浏览型号MJD32CTM的Datasheet PDF文件第5页浏览型号MJD32CTM的Datasheet PDF文件第6页浏览型号MJD32CTM的Datasheet PDF文件第7页 
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MJD32CTM 替代型号

型号 品牌 替代类型 描述 数据表
KSH32CTF ONSEMI

类似代替

PNP外延硅晶体管
MJD32CTF ONSEMI

类似代替

3.0 A, 100 V PNP Bipolar Power Transistor

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