5秒后页面跳转
MJD340G PDF预览

MJD340G

更新时间: 2024-01-21 13:06:20
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
5页 120K
描述
High Voltage Power Transistors

MJD340G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:0.39
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
功耗环境最大值:1.56 W最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

MJD340G 数据手册

 浏览型号MJD340G的Datasheet PDF文件第2页浏览型号MJD340G的Datasheet PDF文件第3页浏览型号MJD340G的Datasheet PDF文件第4页浏览型号MJD340G的Datasheet PDF文件第5页 
MJD340 (NPN)  
MJD350 (PNP)  
High Voltage Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for line operated audio output amplifier, switchmode  
power supply drivers and other switching applications.  
SILICON  
Features  
POWER TRANSISTORS  
0.5 AMPERE  
300 VOLTS, 15 WATTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Electrically Similar to Popular MJE340 and MJE350  
300 V (Min) V  
CEO(sus)  
4
0.5 A Rated Collector Current  
Epoxy Meets UL 94 V0 @ 0.125 in  
2
1
ESD Ratings: Human Body Model, 3B u 8000 V  
3
Machine Model, C u 400 V  
DPAK  
CASE 369C  
STYLE 1  
These are PbFree Packages  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Max  
300  
300  
3
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
V
CEO  
V
CB  
AYWW  
J3x0G  
V
EB  
I
C
0.5  
0.75  
Collector Current Continuous  
Peak  
A
Y
= Assembly Location  
= Year  
P
P
15  
W
Total Power Dissipation @ T = 25°C  
D
C
0.12  
W/°C  
Derate above 25°C  
WW = Work Week  
J3x0 = Device Code  
x= 4 or 5  
Total Power Dissipation (Note 1)  
D
1.56  
0.012  
W
W/°C  
@ T = 25°C  
A
G
= PbFree Package  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
80  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoCase  
R
q
JC  
Thermal Resistance, JunctiontoAmbient  
(Note 1)  
R
q
JA  
Leading Temperature for Soldering Purpose  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 8  
MJD340/D  
 

MJD340G 替代型号

型号 品牌 替代类型 描述 数据表
MJD340T4 ONSEMI

完全替代

0.5 A,300 V,高电压,NPN 双极功率晶体管
MJD340RLG ONSEMI

类似代替

High Voltage Power Transistors
MJD340T4G ONSEMI

类似代替

High Voltage Power Transistors

与MJD340G相关器件

型号 品牌 获取价格 描述 数据表
MJD340R SWST

获取价格

功率三极管
MJD340RL ONSEMI

获取价格

0.5 A,300 V,高电压,NPN 双极功率晶体管
MJD340RLG ONSEMI

获取价格

High Voltage Power Transistors
MJD340T4 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340T4 ONSEMI

获取价格

0.5 A,300 V,高电压,NPN 双极功率晶体管
MJD340T4 STMICROELECTRONICS

获取价格

互补硅功率晶体管
MJD340T4G ONSEMI

获取价格

High Voltage Power Transistors
MJD340TF FAIRCHILD

获取价格

High Voltage Power Transistors D-PAK for Surface Mount Applications
MJD340TF ONSEMI

获取价格

0.5 A, 300 V High Voltage NPN Bipolar Power Transistor
MJD350 FAIRCHILD

获取价格

High Voltage Power Transistors D-PAK for Surface Mount Applications