MJD340TF

更新时间： 2024-09-12 22:46:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	40K
描述
High Voltage Power Transistors D-PAK for Surface Mount Applications

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MJD340TF 数据手册

MJD340

High Voltage Power Transistors

D-PAK for Surface Mount Applications

•

Lead Formed for Surface Mount Applications (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

300

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

CBO

CEO

EBO

300

0.5

0.75

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= 1mA, I = 0

300

CEO

EBO

= 300V, I =0

0.1

= 3V, I = 0

* DC Current Gain

= 10V, I = 50mA

240

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4

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MJD340TF 替代型号

型号	品牌	替代类型	描述	数据表
MJD340RLG	ONSEMI	完全替代	High Voltage Power Transistors
MJD340T4G	ONSEMI	功能相似	High Voltage Power Transistors

与MJD340TF相关器件

型号	品牌	获取价格	描述	数据表
MJD350	FAIRCHILD	获取价格	High Voltage Power Transistors D-PAK for Surface Mount Applications
MJD350	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJD350	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD350	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350	DIODES	获取价格	HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
MJD350	KEXIN	获取价格	PNP Epitaxial Silicon Transistor
MJD350	TYSEMI	获取价格	Load Formed for Surface Mount Application
MJD350	FOSHAN	获取价格	TO-252
MJD350-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350-13	DIODES	获取价格	HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR