MJD350-I

更新时间： 2024-11-18 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
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4页	197K
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MJD350-I 数据手册

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by MJD340/D

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier, switchmode power supply drivers

and other switching applications.

*Motorola Preferred Device

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular MJE340 and MJE350

SILICON

POWER TRANSISTORS

0.5 AMPERE

300 VOLTS

15 WATTS

300 V (Min) — V

0.5 A Rated Collector Current

CEO(sus)

MAXIMUM RATINGS

Rating

Symbol

Value

300

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 369A–13

Collector Current — Continuous

— Peak

0.5

0.75

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

Total Power Dissipation* @ T = 25 C

Derate above 25 C

1.56

0.012

Watts

W/ C

CASE 369–07

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

Symbol

Max

8.33

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

Lead Temperature for Soldering Purpose

θJC

θJA

260

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

Symbol

Min

Max

Unit

300

—

Vdc

CEO(sus)

(I = 1 mAdc, I = 0)

Collector Cutoff Current (V

= 300 Vdc, I = 0)

—

0.1

mAdc

CBO

Emitter Cutoff Current (V

= 3 Vdc, I = 0)

EBO

ON CHARACTERISTICS (1)

DC Current Gain (I = 50 mAdc, V

= 10 Vdc)

240

—

* When surface mounted on minimum pad sizes recommended.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

inches

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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