Datasheet > MJD41C

MJD41C

更新时间： 2024-11-02 14:53:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1863K
描述
TO-252-2L

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中文翻译

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数据手册

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MJD41C 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistors

MJD41C ^{TRANSISTOR (NPN)}

TO-252-2L

FEATURES

Designed for General Purpose Amplifier and Low Speed

^1.BASE

S witching Applications.

Lead Formed for Surface Mount Applications in Plastic

2.COLLECTOR

3.EMITTER

Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP41 and TIP42 Series

Monolithic Construction With Built–in Base–Emitter Resistors

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

MJD41Cꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ

ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ ꢃ

ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ

MJD41C

XXXX

XXXX=Code

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Current -Pluse

Collector Power Dissipation

I_CP

P_C

1.25

Operating Junction and

Temperature Range

Storage

T_J,Tstg

℃

-55-150

www.jscj-elec.com

Rev. - 2.1

12 3 4 5

中文翻译

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