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MJD350T4 PDF预览

MJD350T4

更新时间： 2024-11-17 22:36:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 197K
描述
SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

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中文翻译

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MJD350T4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.64
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：300 V
配置：SINGLE最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-G2元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
功耗环境最大值：15 W认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MJD350T4 数据手册

 浏览型号MJD350T4的Datasheet PDF文件第2页浏览型号MJD350T4的Datasheet PDF文件第3页浏览型号MJD350T4的Datasheet PDF文件第4页 
Order this document  
by MJD340/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
Designed for line operated audio output amplifier, switchmode power supply drivers  
and other switching applications.  
*Motorola Preferred Device  
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular MJE340 and MJE350  
SILICON  
POWER TRANSISTORS  
0.5 AMPERE  
300 VOLTS  
15 WATTS  
300 V (Min) — V  
0.5 A Rated Collector Current  
CEO(sus)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
300  
300  
3
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
V
EB  
CASE 369A–13  
Collector Current — Continuous  
— Peak  
I
C
0.5  
0.75  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
15  
0.12  
Watts  
W/ C  
Total Power Dissipation* @ T = 25 C  
A
Derate above 25 C  
P
D
1.56  
0.012  
Watts  
W/ C  
CASE 369–07  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
Symbol  
Max  
8.33  
80  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient*  
Lead Temperature for Soldering Purpose  
R
R
θJC  
θJA  
T
L
260  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
Symbol  
Min  
Max  
Unit  
V
300  
—
Vdc  
CEO(sus)  
(I = 1 mAdc, I = 0)  
C
B
Collector Cutoff Current (V  
CB  
= 300 Vdc, I = 0)  
I
—
—
0.1  
0.1  
mAdc  
mAdc  
E
CBO  
Emitter Cutoff Current (V  
BE  
= 3 Vdc, I = 0)  
I
EBO  
C
ON CHARACTERISTICS (1)  
DC Current Gain (I = 50 mAdc, V  
= 10 Vdc)  
h
FE  
30  
240  
—
C
CE  
* When surface mounted on minimum pad sizes recommended.  
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.  
inches  
mm  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995
1234

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