Datasheet > MJD350TF

MJD350TF

更新时间： 2024-11-19 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
5页	270K
描述
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor

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替代型号

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MJD350TF 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.11
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	300 V	配置：	SINGLE
最小直流电流增益 (hFE)：	30	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	最大功率耗散 (Abs)：	15 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

MJD350TF 数据手册

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MJD350TF 替代型号

型号	品牌	替代类型	描述	数据表
NJVMJD350T4G	ONSEMI	完全替代	High Voltage Power Transistors
MJD350G	ONSEMI	完全替代	High Voltage Power Transistors
MJD350T4G	ONSEMI	功能相似	High Voltage Power Transistors

与MJD350TF相关器件

型号	品牌	获取价格	描述	数据表
MJD360T4-A	STMICROELECTRONICS	获取价格	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-252AA, ROHS COMPLIANT, TO-252, DPAK-3
MJD361T4-A	STMICROELECTRONICS	获取价格	3A, 60V, PNP, Si, POWER TRANSISTOR, TO-252AA, ROHS COMPLIANT, TO-252, DPAK-3
MJD41C	ONSEMI	获取价格	Complementary Power Transistors
MJD41C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica
MJD41C	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C	NEXPERIA	获取价格	100 V, 6 A NPN high power bipolar transistorProduction
MJD41C	WEITRON	获取价格	NPN PLASTIC ENCAPSULATE TRANSISTORS
MJD41C	KEXIN	获取价格	Complementary Power Transistors
MJD41C	CJ	获取价格	TO-252-2L
MJD41C	YANGJIE	获取价格	TO-252

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