Datasheet > MJD41C

MJD41C

更新时间： 2024-11-01 10:55:51

品牌	Logo	应用领域
WEITRON		晶体晶体管放大器
页数	文件大小	规格书
5页	566K
描述
NPN PLASTIC ENCAPSULATE TRANSISTORS

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中文翻译

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技术参数
数据手册

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MJD41C 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

MJD41C 数据手册

MJD41C

NPN PLASTIC ENCAPSULATE TRANSISTORS

P b

Lead(Pb)-Free

1.BASE

2.COLLECTOR

3.EMITTER

Features:

* Designed for general purpose ampliꢀer and low speed

switching applications.

D-PAK(TO-252)

* Monolithic Construction With Built–in Base–Emitter Resistors.

ABSOLUTE MAXIMUM RATINGS (T =25˚C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

100

CBO

100

5.0

6.0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CEO

EBO

Collector Power Dissipation

1.25

+150

˚C

Junction Temperature

Storage Temperature Range

stg

-65 to +150

WEITRON

http://www.weitron.com.tw

1/5

19-Nov-09

12 3 4 5

中文翻译

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