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MJD41C(TO-251) PDF预览

MJD41C(TO-251)

更新时间: 2024-11-02 04:25:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
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描述
Transistor

MJD41C(TO-251) 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-251 Plastic-Encapsulate Transistors  
MJD41C TRANSISTOR (NPN)  
TO-251  
FEATURES  
z
Designed for General Purpose Amplifier and Low Speed  
1.BASE  
Switching Applications.  
z
Lead Formed for Surface Mount Applications in Plastic  
Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular TIP41 and TIP42 Series  
Monolithic Construction With Built–in Base–Emitter Resistors  
2.COLLECTOR  
3.EMITTER  
z
z
z
z
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
100  
100  
5
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
6
A
PC  
1.25  
150  
-65-150  
W
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
100  
100  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=100μA,IE=0  
V(BR)CEO IC=30mA,IB=0  
V(BR)EBO IE=100μA,IC=0  
V
V
ICEO  
IEBO  
VCB=60V,IE=0  
50  
μA  
mA  
Emitter cut-off current  
VEB=5V IC=0  
0.5  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=4V IC=0.3A  
VCE=4V,IC=3A  
30  
15  
DC current gain  
75  
1.5  
2
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=6A,IB=0.6A  
V
V
VCE=4V,IC=6A  
Transition frequency  
fT  
VCE=10V,IC=500mA,f=1MHz  
3
MHz  
A,Jun,2011  

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