Datasheet > MJD41C1

MJD41C1

更新时间： 2024-11-01 21:12:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	194K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJD41C1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	6 A
配置：	Single	最小直流电流增益 (hFE)：	15
JESD-609代码：	e0	最高工作温度：	140 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	3 MHz
Base Number Matches：	1

MJD41C1 数据手册

Order this document

by MJD41C/D

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

*Motorola Preferred Device

Designed for general purpose amplifier and low speed switching applications.

SILICON

POWER TRANSISTORS

6 AMPERES

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP41 and TIP42 Series

100 VOLTS

20 WATTS

Monolithic Construction With Built–in Base–Emitter Resistors

MAXIMUM RATINGS

MJD41C

MJD42C

Rating

Symbol

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

100

CASE 369A–13

Collector Current — Continuous

Peak

Base Current

Adc

CASE 369–07

Total Power Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.16

Total Power Dissipation* @ T = 25 C

Derate above 25 C

1.75

Watts

W/ C

0.014

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

T , T

–65 to +150

Operating and Storage Junction

Temperature Range

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

θJC

θJA

* These ratings are applicable when surface mounted on the minimum pad size recommended.

inches

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

中文翻译

下载PDF

与MJD41C1相关器件

型号	品牌	获取价格	描述	数据表
MJD41C-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C-1(TO-251)	CJ	获取价格	Transistor
MJD41CHE3	MCC	获取价格
MJD41CNPN	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CQ	DIODES	获取价格	NPN, 100V, 6A, TO252
MJD41CQ	YANGJIE	获取价格	TO-252
MJD41C-Q	NEXPERIA	获取价格	100 V, 6 A NPN high power bipolar transistorProduction
MJD41CRL	ONSEMI	获取价格	Complementary Power Transistors
MJD41CRLG	ONSEMI	获取价格	Complementary Power Transistors
MJD41CT4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS