5秒后页面跳转
MJD41C1 PDF预览

MJD41C1

更新时间: 2024-09-15 21:12:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 194K
描述
Transistor

MJD41C1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):6 A
配置:Single最小直流电流增益 (hFE):15
JESD-609代码:e0最高工作温度:140 °C
极性/信道类型:NPN最大功率耗散 (Abs):20 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):3 MHz
Base Number Matches:1

MJD41C1 数据手册

 浏览型号MJD41C1的Datasheet PDF文件第2页浏览型号MJD41C1的Datasheet PDF文件第3页浏览型号MJD41C1的Datasheet PDF文件第4页浏览型号MJD41C1的Datasheet PDF文件第5页浏览型号MJD41C1的Datasheet PDF文件第6页 
Order this document  
by MJD41C/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
*Motorola Preferred Device  
Designed for general purpose amplifier and low speed switching applications.  
SILICON  
POWER TRANSISTORS  
6 AMPERES  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular TIP41 and TIP42 Series  
100 VOLTS  
20 WATTS  
Monolithic Construction With Built–in Base–Emitter Resistors  
MAXIMUM RATINGS  
MJD41C  
MJD42C  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
100  
100  
5
CASE 369A–13  
V
CB  
V
EB  
I
C
Collector Current — Continuous  
Peak  
6
10  
Base Current  
I
B
2
Adc  
CASE 369–07  
P
D
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
20  
Watts  
W/ C  
0.16  
P
D
Total Power Dissipation* @ T = 25 C  
A
Derate above 25 C  
1.75  
Watts  
W/ C  
0.014  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
T , T  
65 to +150  
C
Operating and Storage Junction  
Temperature Range  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient*  
R
R
θJC  
θJA  
* These ratings are applicable when surface mounted on the minimum pad size recommended.  
inches  
mm  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

与MJD41C1相关器件

型号 品牌 获取价格 描述 数据表
MJD41C-1 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C-1(TO-251) CJ

获取价格

Transistor
MJD41CHE3 MCC

获取价格

MJD41CNPN TYSEMI

获取价格

Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CQ DIODES

获取价格

NPN, 100V, 6A, TO252
MJD41CQ YANGJIE

获取价格

TO-252
MJD41C-Q NEXPERIA

获取价格

100 V, 6 A NPN high power bipolar transistorProduction
MJD41CRL ONSEMI

获取价格

Complementary Power Transistors
MJD41CRLG ONSEMI

获取价格

Complementary Power Transistors
MJD41CT4 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS