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MJD41C PDF预览

MJD41C

更新时间: 2024-11-02 11:15:19
品牌 Logo 应用领域
安世 - NEXPERIA 放大器晶体管
页数 文件大小 规格书
11页 223K
描述
100 V, 6 A NPN high power bipolar transistorProduction

MJD41C 数据手册

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MJD41C  
100 V, 6 A NPN high power bipolar transistor  
10 May 2021  
Product data sheet  
1. General description  
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device  
(SMD) plastic package.  
PNP complement: MJD42C  
2. Features and benefits  
High thermal power dissipation capability  
High energy efficiency due to less heat generation  
Electrically similar to popular MJD41 series  
Low collector emitter saturation voltage  
Fast switching speeds  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Constant current drive backlighting application  
Motor drive  
Relay replacement  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
100  
V
IC  
collector current  
-
-
-
-
6
A
A
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
DC current gain VCE = 4 V; IC = 0.3 mA; pulsed; tp ≤  
-
10  
-
30  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
VCE = 4 V; IC = 3 A; pulsed; tp ≤ 300 µs;  
δ ≤ 0.02; Tamb = 25 °C  
15  
-
-
 
 
 
 

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