Datasheet > MJD41C

MJD41C

更新时间： 2024-11-19 11:15:19

品牌	Logo	应用领域
安世 - NEXPERIA		放大器晶体管
页数	文件大小	规格书
11页	223K
描述
100 V, 6 A NPN high power bipolar transistorProduction

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MJD41C 数据手册

MJD41C

100 V, 6 A NPN high power bipolar transistor

10 May 2021

Product data sheet

1. General description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

PNP complement: MJD42C

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD41 series

Low collector emitter saturation voltage

Fast switching speeds

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 4 V; I_C= 0.3 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= 4 V; I_C= 3 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...11

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