Datasheet > MJD42_MJD42C

MJD42_MJD42C

更新时间： 2024-09-14 22:33:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
5页	51K
描述
General Purpose Amplifier Low Speed Switching Applications

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MJD42_MJD42C 数据手册

MJD42C

General Purpose Amplifier

Low Speed Switching Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I.PACK, “- I” Suffix)

Electrically Similar to Popular TIP42C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-100

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

CBO

CEO

EBO

-6

-10

-2

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.75

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= - 30mA, I = 0

-100

CEO

CES

EBO

= -60V, I = 0

-50

-10

µA

= -100V, V = 0

= -5V, I = 0

-0.5

* DC Current Gain

= -4V, I = -0.3A

= -4V, I = -3A

-1.5

-2

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

= -6A, I = -600mA

(on)

= -6A, I = -4A

Current Gain Bandwidth Product

= -10V, I = -500mA

MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A1, February 2001

12 3 4 5

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