Datasheet > MJD41V

MJD41V

更新时间： 2024-11-06 14:53:15

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	243K
描述
功率三极管

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中文翻译

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数据手册

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MJD41V 数据手册

MJD41V-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-263 Plastic Package

Absolute Maximum Ratings

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

I_CM

T_a= 25℃

T_C= 25℃

Total Power Dissipation

P_D

Operating Junction Temperature

Storage Temperature Range

T_j

- 65 to + 150

- 55 to + 150

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Unit

℃/W

Max.

62.5

1.9

Thermal Resistance - Junction to Ambient ¹⁾

Thermal Resistance - Junction to Case

R_θJC

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 5

Dated: 31/08/2023 Rev: 01

12 3 4 5

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