5秒后页面跳转
MJD41C_11 PDF预览

MJD41C_11

更新时间: 2024-11-05 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 117K
描述
Complementary Power Transistors

MJD41C_11 数据手册

 浏览型号MJD41C_11的Datasheet PDF文件第2页浏览型号MJD41C_11的Datasheet PDF文件第3页浏览型号MJD41C_11的Datasheet PDF文件第4页浏览型号MJD41C_11的Datasheet PDF文件第5页浏览型号MJD41C_11的Datasheet PDF文件第6页 
MJD41C (NPN)  
MJD42C (PNP)  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
6 AMPERES  
Features  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
100 VOLTS, 20 WATTS  
Electrically Similar to Popular TIP41 and TIP42 Series  
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAMS  
4
AYWW  
J4xCG  
These are PbFree Packages  
2
1
3
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Max  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
4
V
CB  
EB  
AYWW  
J4xCG  
V
I
C
6
10  
Collector Current Continuous  
Peak  
1
2
DPAK3  
CASE 369D  
STYLE 1  
3
Base Current  
I
B
2
Adc  
P
D
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
C
Derate above 25°C  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation (Note 1)  
P
D
W
W/°C  
°C  
1.75  
0.014  
@ T = 25°C  
WW = Work Week  
J4xC = Device Code  
x = 1 or 2  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
J
stg  
G
= PbFree Package  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoCase  
R
q
JC  
Thermal Resistance, JunctiontoAmbient  
(Note 1)  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 9  
MJD41C/D  
 

与MJD41C_11相关器件

型号 品牌 获取价格 描述 数据表
MJD41C1 MOTOROLA

获取价格

Transistor
MJD41C-1 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C-1(TO-251) CJ

获取价格

Transistor
MJD41CHE3 MCC

获取价格

MJD41CNPN TYSEMI

获取价格

Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CQ DIODES

获取价格

NPN, 100V, 6A, TO252
MJD41CQ YANGJIE

获取价格

TO-252
MJD41C-Q NEXPERIA

获取价格

100 V, 6 A NPN high power bipolar transistorProduction
MJD41CRL ONSEMI

获取价格

Complementary Power Transistors
MJD41CRLG ONSEMI

获取价格

Complementary Power Transistors