Datasheet > MJD41C_11

MJD41C_11

更新时间： 2024-11-01 10:55:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	117K
描述
Complementary Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD41C_11 数据手册

MJD41C (NPN)

MJD42C (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose amplifier and low speed switching

applications.

SILICON

POWER TRANSISTORS

6 AMPERES

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

100 VOLTS, 20 WATTS

• Electrically Similar to Popular TIP41 and TIP42 Series

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MARKING

DIAGRAMS

AYWW

J4xCG

• These are Pb−Free Packages

DPAK

CASE 369C

STYLE 1

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

100

Unit

Vdc

Adc

CEO

AYWW

J4xCG

Collector Current − Continuous

− Peak

DPAK−3

CASE 369D

STYLE 1

Base Current

Adc

0.16

W/°C

Total Power Dissipation @ T = 25°C

Derate above 25°C

= Assembly Location

= Year

Total Power Dissipation (Note 1)

W/°C

°C

1.75

0.014

@ T = 25°C

WW = Work Week

J4xC = Device Code

x = 1 or 2

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

= Pb−Free Package

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Symbol

Max

6.25

71.4

Unit

°C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

Publication Order Number:

January, 2011 − Rev. 9

MJD41C/D

12 3 4 5 6

中文翻译

下载PDF

与MJD41C_11相关器件

型号	品牌	获取价格	描述	数据表
MJD41C1	MOTOROLA	获取价格	Transistor
MJD41C-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C-1(TO-251)	CJ	获取价格	Transistor
MJD41CHE3	MCC	获取价格
MJD41CNPN	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CQ	DIODES	获取价格	NPN, 100V, 6A, TO252
MJD41CQ	YANGJIE	获取价格	TO-252
MJD41C-Q	NEXPERIA	获取价格	100 V, 6 A NPN high power bipolar transistorProduction
MJD41CRL	ONSEMI	获取价格	Complementary Power Transistors
MJD41CRLG	ONSEMI	获取价格	Complementary Power Transistors