是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 140 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD42C(TO-252-2L) | CJ |
获取价格 |
Transistor | |
MJD42C1 | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD42C1 | MOTOROLA |
获取价格 |
Transistor | |
MJD42C-1 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS | |
MJD42C-1(TO-25) | CJ |
获取价格 |
Transistor | |
MJD42C-1(TO-251) | CJ |
获取价格 |
Transistor | |
MJD42C-1(TO-252-2L) | CJ |
获取价格 |
Transistor | |
MJD42C1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD42CG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD42CHE3 | MCC |
获取价格 |
Tape & Reel:2.5Kpcs/Reel; |