Datasheet > MJD41C(TO-251)

MJD41C(TO-251)

更新时间： 2024-09-16 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	187K
描述
100V,6A,General Purpose NPN Bipolar Transistor

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MJD41C(TO-251) 数据手册

Product Specification

Epitaxial Planar NPN Transistor

MJD41C

FEATURES



Low formed for surface mount application.



Electrically similar to popular and TIP41C.

APPLICATIONS



General purpose amplifier.



Low speed switching applications.

TO-251

TO-252

Ordering Information

Part Number

Package

TO-251

TO-252

Shipping

Marking Code

80 pcs / Tube

MJD41C

80 pcs / Tube or 2500 pcs / Tape & Reel

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

100

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

100

Collector Current -Continuous

Collector Current -Peak

Base Current

I_CP

I_B

Collector Power Dissipation

Junction and Storage temperature range

P_C

1.25

℃

T_j,T_stg

-65 to +150

STM0295A

www.gmesemi.com

12 3 4 5

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