Datasheet > MJD41C

MJD41C

更新时间： 2024-09-13 12:17:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
2页	46K
描述
Complementary Power Transistors

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中文翻译

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数据手册

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MJD41C 数据手册

SMD Type

Transistors

Complementary Power Transistors

MJD41C(NPN)

MJD42C(PNP)

TO-252

Features

Unit: mm

Lead Formed for Surface Mount Applications in Plastic Sleeves

Monolithic Construction With Built?in Base ? Emitter Resistors

Pb-Free Packages are Available

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Symbol

V^CEO

V^CB

V^EB

I^C

Rating

100

Unit

Collector-base voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Base current

I^CP

I^B

Total Device Dissipation FR-5 Board

@T^A= 25

Derate above 25

0.16

Total Device Dissipation Alumina Substrate

@T^A= 25

1.75

Derate above 25

0.014

Junction temperature

150

-65 to +150

6.25

Storage temperature

Tstg

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RèJC

R^èJA

71.4

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