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MJD41C PDF预览

MJD41C

更新时间： 2024-10-31 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器
页数 文件大小 规格书
6页 93K
描述
Complementary Power Transistors

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中文翻译

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MJD41C 数据手册

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MJD41C (NPN)  
MJD42C (PNP)  
Preferred Device  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
6 AMPERES  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
100 VOLTS  
20 WATTS  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
• Electrically Similar to Popular TIP41 and TIP42 Series  
• Monolithic Construction With Built−in Base − Emitter Resistors  
• Epoxy Meets UL 94, V−0 @ 0.125 in.  
MARKING  
DIAGRAMS  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
DPAK  
CASE 369C  
STYLE 1  
YWW  
J4xC  
2
1
3
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
4
V
CEO  
DPAK−3  
CASE 369D  
STYLE 1  
YWW  
J4xC  
V
CB  
EB  
V
1
2
I
C
6
10  
Collector Current − Continuous  
Peak  
3
Y
= Year  
Base Current  
I
B
2
Adc  
WW  
x
= Work Week  
= 1 or 2  
P
D
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
C
Derate above 25°C  
P
D
1.75  
0.014  
Total Power Dissipation* @ T = 25°C  
W
W/°C  
A
ORDERING INFORMATION  
Derate above 25°C  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
R
q
JC  
JA  
R
q
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 5  
MJD41C/D  
123456

中文翻译

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MJD41C 替代型号

型号 品牌 替代类型 描述 数据表
MJD41CRL ONSEMI

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MJD41CT4G ONSEMI

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