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MJD361T4-A PDF预览

MJD361T4-A

更新时间: 2024-10-31 21:21:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关晶体管
页数 文件大小 规格书
7页 84K
描述
3A, 60V, PNP, Si, POWER TRANSISTOR, TO-252AA, ROHS COMPLIANT, TO-252, DPAK-3

MJD361T4-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, TO-252, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.81外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJD361T4-A 数据手册

 浏览型号MJD361T4-A的Datasheet PDF文件第2页浏览型号MJD361T4-A的Datasheet PDF文件第3页浏览型号MJD361T4-A的Datasheet PDF文件第4页浏览型号MJD361T4-A的Datasheet PDF文件第5页浏览型号MJD361T4-A的Datasheet PDF文件第6页浏览型号MJD361T4-A的Datasheet PDF文件第7页 
MJD360T4-A  
MJD361T4-A  
Low voltage complementary power transistors  
Preliminary data  
Features  
Those devices are qualified for automotive  
application  
TAB  
Low collector emitter saturation voltage  
Surface-mounting TO-252 power package in  
tape and reel  
3
1
Applications  
DPAK  
TO-252  
General purpose switching and amplifier  
transistor  
Description  
Figure 1.  
Internal schematic diagrams  
The devices are manufactured in planar  
technology with “base Island” layout. The  
resulting transistor shows exceptional high gain  
performance coupled with very low saturation  
voltage.  
Table 1.  
Device summary  
Order code  
Marking  
Polarity  
Package  
Packaging  
MJD360T4-A  
MJD361T4-A  
MJD360  
MJD361  
NPN  
PNP  
DPAK  
Tape and reel  
August 2009  
Doc ID 16126 Rev 1  
1/7  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
7

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