MJD350

更新时间： 2024-09-12 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	40K
描述
High Voltage Power Transistors D-PAK for Surface Mount Applications

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MJD350 数据手册

MJD350

High Voltage Power Transistors

D-PAK for Surface Mount Applications

•

Lead Formed for Surface Mount Applications (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 300

- 3

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

CBO

CEO

EBO

- 0.5

- 0.75

Collector Dissipation (T = 25°C)

°C

Collector Dissipation (T = 25°C)

1.56

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= 1mA, I = 0

-300

CEO

EBO

= -300V, I =0

-0.1

240

= -3V, I = 0

* DC Current Gain

= -10V, I = -50mA

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4

中文翻译

下载PDF

MJD350 替代型号

型号	品牌	替代类型	描述	数据表
MJD350TF	FAIRCHILD	功能相似	High Voltage Power Transistors
MJD350T4G	ONSEMI	功能相似	High Voltage Power Transistors

与MJD350相关器件

型号	品牌	获取价格	描述	数据表
MJD350-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350-13	DIODES	获取价格	HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
MJD350G	ONSEMI	获取价格	High Voltage Power Transistors
MJD350-I	ONSEMI	获取价格	暂无描述
MJD350R	SWST	获取价格	功率三极管
MJD350T4	ONSEMI	获取价格	0.5 A, 300 V High Voltage PNP Bipolar Power Transistor
MJD350T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350T4	STMICROELECTRONICS	获取价格	互补硅功率晶体管
MJD350T4G	ONSEMI	获取价格	High Voltage Power Transistors
MJD350TF	FAIRCHILD	获取价格	High Voltage Power Transistors