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MJD350

更新时间： 2024-09-13 10:55:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管高压
页数 文件大小 规格书
4页 96K
描述
HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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MJD350 数据手册

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MJD350  
HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
High Collector-EmitterVoltage  
Ideally Suited for Automated Assembly Processes  
Ideal for Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
•
•
Case: DPAK  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
•
•
•
•
•
Ordering Information: See Page 3  
Weight: 0.34 grams (approximate)  
COLLECTOR  
3
4
2
BASE  
1
EMITTER  
Device Schematic  
Top View  
Pin Out Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-300  
-300  
-3  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Continuous Collector Current  
Peak Pulse Collector Current  
-0.5  
A
-0.75  
A
ICM  
Thermal Characteristics  
Characteristic  
Power Dissipation @TC = 25°C  
Symbol  
PD  
Value  
15  
Unit  
W
Thermal Resistance, Junction to Case  
Power Dissipation @TA = 25°C (Note 3)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
8.33  
°C/W  
W
Rθ  
PD  
JC  
1.56  
81  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Emitter Sustaining Voltage (Note 4)  
Collector Cutoff Current  
-300  
⎯
⎯
V
V(SUS)CEO  
ICBO  
⎯
⎯
⎯
⎯
-100  
IC = -1mA, IB = 0  
μA  
μA  
VCB = -300V, IE = 0  
VEB = - 3V, IC = 0  
Emitter Cutoff Current  
-100  
IEBO  
ON CHARACTERISTICS (Note 4)  
DC Current Gain  
30  
240  
hFE  
⎯
⎯
VCE = -10V, IC = -50mA  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with the minimum pad size recommended.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
1 of 4  
www.diodes.com  
November 2008  
© Diodes Incorporated  
MJD350  
Document number: DS31608 Rev. 2 - 2  
1234

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